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Title:

Energy of CDM Failure for ICs on Package-, Wafer and Board-Level

Document type:
Konferenzbeitrag
Contribution type:
Textbeitrag / Aufsatz
Author(s):
Lena Zeitlhoefler, Friedrich zur Nieden, Kai Esmark, Gernot Langguth, Franz Kreupl
Abstract:
An energy-based failure is analyzed for Charged-Device-Model-like (CDM) discharges. The stress of an electrostatic discharge (ESD) element can be quantified and simulated, if the background capacitance of an IC domain is known. Differences between package, wafer and board level are evaluated using the Capacitively Coupled Transmission Line Pulsing (CCTLP) method. The difference in the switching behavior of an ESD element due to capacitance relations is evaluated on package-and waferlevel.
Book / Congress title:
41st EOS/ESD Symposium
Organization:
EOS/ESD Association
Date of congress:
15..09.2019
Year:
2019
Language:
en
Fulltext / DOI:
doi:10.23919/EOS/ESD.2019.8869989
WWW:
https://ieeexplore.ieee.org/document/8869989
TUM Institution:
Hybride Elektronische Systeme
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