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- Title:
Resolving Trap-caused Charges by Scanning Microwave Microscopy
- Document type:
- Konferenzbeitrag
- Contribution type:
- Vortrag / Präsentation
- Author(s):
- S. Hommel, N. Killat, T. Schweinboeck, A. Altes , F. Kreupl
- Abstract:
- Trapping effects are playing an essential role in semiconductor devices. The localization of trapping effects with a high spatial resolution can provide valuable information on the interface and oxide quality in state of the art semiconductor devices. On the example of a Si diode with suspected oxide traps, a method based on Scanning Microwave Microscopy (SMM) is shown to resolve charge carriers, which accumulate within the silicon due to trapping effects at the Si/SiO2 interface.
- Editor:
- IEEE
- Book / Congress title:
- The International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
- Date of congress:
- 16.-19.7
- Date of publication:
- 18.07.2018
- Year:
- 2018
- Pages:
- 6
- Reviewed:
- ja
- Publication format:
- WWW
- TUM Institution:
- Hybride Elektronische Systeme
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