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Title:

METHODS FOR FORMING A MEMORY CELL WITH SILICON-CONTAINING CARBON SWITCHING LAYER

Document type:
Patent
Patent number:
EP 2539936 B1
Inventor:
KREUPL FRANZ, DE ; XU HUIWEN, US ; ZHANG JINGYAN, US
Assignee:
KREUPL FRANZ, DE ; XU HUIWEN, US ; ZHANG JINGYAN, US
Patent office:
EP
Publication date patent:
06.04.2016
Year:
2016
Language:
en
Covered by:
Scopus
TUM Institution:
Hybride Elektronische Systeme
Format:
Text
 BibTeX