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Title:

Structure and fabrication method for resistance-change memory cell in 3-D memory

Document type:
Patent
Patent number:
US 8686419 B2
Inventor:
Franz Kreupl (Mountain View, CA), Deepak C Sekar; (San Jose, CA)
Assignee:
Franz Kreupl (Mountain View, CA), Deepak C Sekar; (San Jose, CA)
Abstract:
A memory device in a 3-D read and write memory includes a resistance-changing layer, and a local contact resistance in series with, and local to, the resistance-changing layer. The local contact resistance is established by a junction between a semiconductor layer and a metal layer. Further, the local contact resistance has a specified level of resistance according to a doping concentration of the semiconductor and a barrier height of the junction. A method for fabricating such a memory device i...     »
Patent office:
US
Publication date patent:
01.04.2014
Year:
2014
Pages:
29 pages
Language:
en
Covered by:
Scopus
TUM Institution:
Hybride Elektronische Systeme
Format:
Text
 BibTeX