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- Title:
Memory Cell With Resistance-Switching Layers
- Document type:
- Patentanmeldung
- Patent application number:
- JP2013534724 (A)
- Inventor:
- KREUPL FRANZ [DE]; BANDYOPADHYAY ABHIJIT [US]; CHEN YUNG TIN [US]; FU CHU CHEN [US]; JAYASEKARA WIPUL PEMSIRI [US]; KAI JAMES [US]; MAKALA RAGHUVEER S [IN]; RABKIN PETER [US]; SAMACHISA GEORGE [US]; ZHANG JINGYAN [US]
- Assignee:
- KREUPL FRANZ [DE]; BANDYOPADHYAY ABHIJIT [US]; CHEN YUNG TIN [US]; FU CHU CHEN [US]; JAYASEKARA WIPUL PEMSIRI [US]; KAI JAMES [US]; MAKALA RAGHUVEER S [IN]; RABKIN PETER [US]; SAMACHISA GEORGE [US]; ZHANG JINGYAN [US]
- Patent office:
- JP
- Publication date application:
- 05.09.2013
- Year:
- 2013
- Language:
- jp
- Covered by:
- Scopus
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
BibTeX