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Title:

[EN] Memory cell with resistance-switching layers and lateral arrangement

Document type:
Patentanmeldung
Patent application number:
CN000102986048A
Inventor:
KREUPL FRANZ, SHRIVASTAVA RITU
Assignee:
KREUPL FRANZ, SHRIVASTAVA RITU
Patent office:
CN
Publication date application:
20.03.2013
Year:
2013
Language:
ch
Covered by:
Scopus
TUM Institution:
Hybride Elektronische Systeme
Format:
Text
 BibTeX