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- Title:
MEMORY CELL WITH SILICON-CONTAINING CARBON SWITCHING LAYER AND METHODS FOR FORMING THE SAME
- Document type:
- Patentanmeldung
- Patent application number:
- EP2539936 (A2)
- Inventor:
- KREUPL FRANZ [US]; ZHANG JINGYAN [US]; XU HUIWEN [US]
- Assignee:
- KREUPL FRANZ [US]; ZHANG JINGYAN [US]; XU HUIWEN [US]
- Abstract:
- In a first aspect, a method of forming a memory cell is provided that includes (1) forming a metal-insulator-metal (MIM) stack, the MIM stack including (a) a first conductive carbon layer; (b) a low-hydrogen, silicon-containing carbon layer above the first conductive carbon layer; and (c) a second conductive carbon layer above the low-hydrogen, silicon-containing carbon layer; and (2) forming a steering element coupled to the MIM stack. Numerous other aspects are provided.
- Patent office:
- EU
- Publication date application:
- 02.01.2013
- Year:
- 2013
- Language:
- en
- Covered by:
- Scopus
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
BibTeX