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- Title:
[EN] MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS INCLUDING BREAKDOWN LAYER
- Document type:
- Patentanmeldung
- Patent application number:
- CN000103003971A
- Inventor:
- FU CHU-CHEN, KREUPL FRANZ, NIAN YIBO
- Assignee:
- FU CHU-CHEN, KREUPL FRANZ, NIAN YIBO
- Patent office:
- CN
- Publication date application:
- 27.03.2013
- Year:
- 2013
- Covered by:
- Scopus
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
BibTeX