The challenges to scale transistor designs well below the 10 nm node are severe. The talk will explain that the frontrunner in this material and design battle is still a channel material based on single-walled carbon nanotubes. It has been shown in experiment that carbon nanotube do outperform any other channel material at these dimensions and provides low voltage operation. Nanotube transistors are free from substitutional dopants, have reduced access resistance without source starvation, are compatible with gate-all-around electrostatics and high-k materials as gate dielectrics. While these are all outstanding features, the road for integration is less clear. Therefore, the second part of the talk will give an overview which concepts , tricks and advancements are on the horizon to establish a technology which is compatible with the requirement to have billions of identical nanotube transistor structures lined up on nanometer-scale gate pitch.     «

The challenges to scale transistor designs well below the 10 nm node are severe. The talk will explain that the frontrunner in this material and design battle is still a channel material based on single-walled carbon nanotubes. It has been shown in experiment that carbon nanotube do outperform any other channel material at these dimensions and provides low voltage operation. Nanotube transistors are free from substitutional dopants, have reduced access resistance without source starvation, ar...     »