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- Dokumenttyp:
- Patentanmeldung
- Patentanmeldung Nr.:
- US 2012091418 (A1)
- Erfinder:
- CHEN YUNG-TIN; KREUPL FRANZ; MAXWELL STEVEN; HOU KUN
- Patentanmelder:
- CHEN YUNG-TIN; KREUPL FRANZ; MAXWELL STEVEN; HOU KUN
- Titel:
- BIPOLAR STORAGE ELEMENTS FOR USE IN MEMORY CELLS AND METHODS OF FORMING THE SAME
- Abstract:
- In some embodiments, a memory cell is provided that includes (1) a bipolar storage element formed from a metal-insulator-metal (MIM) stack including (a) a first conductive layer; (b) a reversible resistivity switching (RRS) layer formed above the first conductive layer; (c) a metal/metal oxide layer stack formed above the first conductive layer; and (d) a second conductive layer formed above the RRS layer and the metal/metal oxide layer stack; and (2) a steering element coupled to the storag... »
- Anmeldeland:
- US
- Veröffentlichungsdatum / Anmeldung:
- 19.04.2012
- Sprache:
- en
- TUM Einrichtung:
- Hybride Elektronische Systeme
- Format:
- Text
BibTeX