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- Title:
Memory Cell With Resistance-Switching Layers Including Breakdown Layer
- Document type:
- Patentanmeldung
- Patent application number:
- US2011310656 (A1)
- Inventor:
- KREUPL FRANZ [DE]; FU CHU-CHEN [US]; NIAN YIBO [US]
- Assignee:
- KREUPL FRANZ [DE]; FU CHU-CHEN [US]; NIAN YIBO [US]
- Patent office:
- US
- Application number:
- US2011310656 (A1)
- Publication date application:
- 22.12.2011
- Year:
- 2011
- Language:
- en
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
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