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- Title:
RESISTANCE-SWITCHING MEMORY CELL WITH HEAVILY DOPED METAL OXIDE LAYER
- Document type:
- Patentanmeldung
- Patent application number:
- US 2011227024 (A1)
- Inventor:
- SEKAR DEEPAK C [US]; KREUPL FRANZ [US]
- Assignee:
- SEKAR DEEPAK C [US]; KREUPL FRANZ [US]
- Patent office:
- US
- Publication date application:
- 22.09.2011
- Year:
- 2011
- Language:
- de
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
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