- Title:
Modifiable gate stack memory element
- Document type:
- Patent
- Patent number:
- US 7915603 B2
- Inventor:
- KREUPL FRANZ [DE]
- Assignee:
- KREUPL FRANZ [DE]
- Patent office:
- USA
- Publication date patent:
- 29.03.2011
- Year:
- 2011
- Language:
- de
- WWW:
- http://www.hes.ei.tum.de/index.php?id=13
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
- BibTeX