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- Title:
MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS INCLUDING BREAKDOWN LAYER
- Document type:
- Patentanmeldung
- Patent application number:
- WO002011159584A1
- Inventor:
- KREUPL FRANZ, US FU CHU-CHEN, US NIAN YIBO, US
- Assignee:
- KREUPL FRANZ, US FU CHU-CHEN, US NIAN YIBO, US
- Patent office:
- WO
- Publication date application:
- 22.12.2011
- Year:
- 2011
- Pages:
- 79 pages
- Language:
- en
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
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