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Title:

MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS INCLUDING BREAKDOWN LAYER

Document type:
Patentanmeldung
Patent application number:
WO002011159584A1
Inventor:
KREUPL FRANZ, US FU CHU-CHEN, US NIAN YIBO, US
Assignee:
KREUPL FRANZ, US FU CHU-CHEN, US NIAN YIBO, US
Patent office:
WO
Publication date application:
22.12.2011
Year:
2011
Pages:
79 pages
Language:
en
TUM Institution:
Hybride Elektronische Systeme
Format:
Text
 BibTeX