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Title:

Memory Cell With Resistance-Switching Layers Including Breakdown Layer

Document type:
Patentanmeldung
Patent application number:
US2011310656 (A1)
Inventor:
KREUPL FRANZ [DE]; FU CHU-CHEN [US]; NIAN YIBO [US]
Assignee:
KREUPL FRANZ [DE]; FU CHU-CHEN [US]; NIAN YIBO [US]
Patent office:
US
Application number:
US2011310656 (A1)
Publication date application:
22.12.2011
Year:
2011
Language:
en
TUM Institution:
Hybride Elektronische Systeme
Format:
Text
 BibTeX