Vertically integrated field-effect transistor having a nanostructure therein
Document type:
Patent
Patent number:
US 7709827 B2
Inventor:
GRAHAM ANDREW, DE HOFMANN FRANZ, DE HOENLEIN WOLFGANG, DE KRETZ JOHANNES, DE KREUPL FRANZ, DE LANDGRAF ERHARD, DE LUYKEN JOHANNES RICHARD, DE ROESNER WOLFGANG, US SCHULZ THOMAS, US SPECHT MICHAEL, DE