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- Titel:
Forming and Resistive Switching of HfO₂-Based RRAM Devices at Cryogenic Temperature
- Dokumenttyp:
- Zeitschriftenaufsatz
- Autor(en):
- Perez-Bosch Quesada, Emilio; Mistroni, Alberto; Jia, Ruolan; Dorai Swamy Reddy, Keerthi; Reichmann, Felix; Castan, Helena; Dueñas, Salvador; Wenger, Christian; Perez, Eduardo
- Stichworte:
- Cryogenics; Logic gates; Switches; MOSFET; Voltage measurement; Switching circuits; Resistance; Hafnium oxide; Current measurement; Transmission electron microscopy; 1T1R; CMOS; cryogenic temperatures; HfO2; resistive switching; RRAM
- Zeitschriftentitel:
- IEEE Electron Device Letters
- Jahr:
- 2024
- Band / Volume:
- 45
- Heft / Issue:
- 12
- Seitenangaben Beitrag:
- 2391-2394
- Volltext / DOI:
- doi:10.1109/LED.2024.3485873
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