GaInAs/GaAsSb-based type-II micro-cavity LED with 2-3 µm light emission grown on InP substrate

Grasse, C.; Gründl, T.; Sprengel, S.; Wiecha, P.; Vizbaras, K.; Meyer, R.; Amann, M. C.

Titel:: GaInAs/GaAsSb-based type-II micro-cavity LED with 2-3 µm light emission grown on InP substrate
Dokumenttyp:: Konferenzbeitrag
Autor(en):: Grasse, C.; Gründl, T.; Sprengel, S.; Wiecha, P.; Vizbaras, K.; Meyer, R.; Amann, M. C.
Kongress- / Buchtitel:: 16th International Conference on Metal Organic Vapor Phase Epitaxy
Konferenzort:: Busan, South Korea
Jahr:: 2012
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