InP-based 2.8-3.5 µm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures

Grasse, C.; Wiecha, P.; Gründl, T.; Sprengel, S.; Meyer, R.; Amann, M. C.

Title:: InP-based 2.8-3.5 µm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures
Author(s):: Grasse, C.; Wiecha, P.; Gründl, T.; Sprengel, S.; Meyer, R.; Amann, M. C.
Journal title:: Applied Physics Letters
Year:: 2012
Journal volume:: 101
Journal issue:: 22
Pages contribution:: 221107
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