InP-based 2.8-3.5 µm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures

Grasse, C.; Wiecha, P.; Gründl, T.; Sprengel, S.; Meyer, R.; Amann, M. C.

Titel:: InP-based 2.8-3.5 µm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures
Autor(en):: Grasse, C.; Wiecha, P.; Gründl, T.; Sprengel, S.; Meyer, R.; Amann, M. C.
Zeitschriftentitel:: Applied Physics Letters
Jahr:: 2012
Band / Volume:: 101
Heft / Issue:: 22
Seitenangaben Beitrag:: 221107
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