GaInAs/GaAsSb-based type-II micro-cavity LED with 2-3 µm light emission grown on InP substrate

Grasse, C.; Gründl, T.; Sprengel, S.; Wiecha, P.; Vizbaras, K.; Meyer, R.; Amann, M. C.

doi:10.1016/j.jcrysgro.2012.07.001

Title:: GaInAs/GaAsSb-based type-II micro-cavity LED with 2-3 µm light emission grown on InP substrate
Author(s):: Grasse, C.; Gründl, T.; Sprengel, S.; Wiecha, P.; Vizbaras, K.; Meyer, R.; Amann, M. C.
Journal title:: Journal of Crystal Growth
Year:: 2012
Journal volume:: 370
Pages contribution:: 240-243
Fulltext / DOI:: doi:10.1016/j.jcrysgro.2012.07.001
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