Login
- Titel:
Physics-Based Compact Model Extension of MOSFET Capacitance Down to Deep-Cryogenic Temperature Ranges
- Dokumenttyp:
- Konferenzbeitrag
- Autor(en):
- Luis, Pöller; Mingchun, Tang; Qing-Tai, Zhao; Amelie, Hagelauer
- Stichworte:
- Semiconductor device modeling; MOSFET; Temperature dependence; Temperature distribution; Ionization; Cryogenics; Voltage; High-voltage techniques; Capacitance; Numerical models; semiconductor; MOSFET; LDMOS; compact modeling; cryogenic; BSIM-BULK
- Kongress- / Buchtitel:
- 2025 International Compact Modeling Conference (ICMC)
- Jahr:
- 2025
- Seiten:
- 1-4
- Volltext / DOI:
- doi:10.1109/ICMC64879.2025.11102312
BibTeX