Increase of the allowable switching rate of wide-bandgap semiconductors through spectral control in a 12 V to 48 V gallium-nitride DC/DC converter

Kacetl, Jan; Kacetl, Tomas; Korte, Christian; Specht, Eduard; Jaensch, Malte; Goetz, Stefan

doi:10.1109/peds.2017.8289252

Dokumenttyp:: Konferenzbeitrag
Autor(en):: Kacetl, Jan; Kacetl, Tomas; Korte, Christian; Specht, Eduard; Jaensch, Malte; Goetz, Stefan
Titel:: Increase of the allowable switching rate of wide-bandgap semiconductors through spectral control in a 12 V to 48 V gallium-nitride DC/DC converter
Kongress- / Buchtitel:: 2017 IEEE 12th International Conference on Power Electronics and Drive Systems (PEDS)
Verlag / Institution:: IEEE
Publikationsdatum:: 01.12.2017
Jahr:: 2017
Volltext / DOI:: doi:10.1109/peds.2017.8289252
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