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Titel:

Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts

Dokumenttyp:
Zeitschriftenaufsatz
Autor(en):
Weber, W.M.; Geelhaar, Graham, A.P.; L.; Unger, E.; Duesber, G.S.; Liebau, M.; Pamler, W.; Cheze, C.; Riechert, H.; Lugli, P.
Abstract:
Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by the axial, self-aligned formation of nickel-silicide source and drain segments along the NW. The transistors with 10−30 nm NW diameters displayed p-type behaviour, sustained current densities of up to 0.5 MA/cm2, and exhibited on/off current ratios of up to 107. The on-currents w...     »
Zeitschriftentitel:
Nano Lett., 2006, 6 (12), pp 2660–2666
Jahr:
2006
Jahr / Monat:
2006-11
Quartal:
4. Quartal
Monat:
Nov
Seitenangaben Beitrag:
2660 - 2666
Nachgewiesen in:
Web of Science
Sprache:
en
Volltext / DOI:
doi:10.1021/nl0613858
WWW:
http://pubs.acs.org/doi/abs/10.1021/nl0613858
Verlag / Institution:
American Chemical Society
Verlagsort:
Washington
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