Login
- Titel:
“Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps”
- Dokumenttyp:
- Konferenzbeitrag
- Art des Konferenzbeitrags:
- Vortrag / Präsentation
- Autor(en):
- Schukfeh, M.I.; Hansen, A.; Tornow, M.; Storm, K.; Thelander, K.D.; Thelander, C.; Samuelson, L.; Hinze, P.; Weimann, T.; Wanderka, N.
- Abstract:
- We demonstrate a wet chemical method to selectively etch InP segments within InAs/InP heterostructure nanowires based on a photo-assisted HAc/HBr solution etching process. We successfully etched InP segments ranging from 60 nm down to about 10 nm in size.
- Dewey-Dezimalklassifikation:
- 500 Naturwissenschaften
- Kongress- / Buchtitel:
- 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO)
- Kongress / Zusatzinformationen:
- Roma, Italy, 27-30 July 2015-07
- Jahr:
- 2015
- Quartal:
- 2. Quartal
- Jahr / Monat:
- 2015-05
- Monat:
- May
- E-ISBN:
- 978-1-4673-8156-7 , 978-1-4673-8155-0
- Sprache:
- en
- Volltext / DOI:
- doi:10.1109/NANO.2015.7388924
- WWW:
- https://ieeexplore.ieee.org/document/7388924
BibTeX