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Titel:

Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps

Dokumenttyp:
Konferenzbeitrag
Art des Konferenzbeitrags:
Textbeitrag / Aufsatz
Autor(en):
Schukfeh, M.I.; Hansen, A.; Tornow, M.; Storm, K.; Thelander, K.D.; Thelander, C.; Samuelson, L.; Hinze, P.; Weimann, T.; Wanderka, N.
Abstract:
We demonstrate a wet chemical method to selectively etch InP segments within InAs/InP heterostructure nanowires based on a photo-assisted HAc/HBr solution etching process. We successfully etched InP segments ranging from 60 nm down to about 10 nm in size.
Stichworte:
heterostructure nanowire; selective etching, nanogap electrodes
Kongress- / Buchtitel:
Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
Kongress / Zusatzinformationen:
Rome, Italy, 27-30 July 2015 2015-07
Jahr:
2015
Quartal:
3. Quartal
Jahr / Monat:
2015-07
Monat:
Jul
Sprache:
en
Volltext / DOI:
doi:10.1109/NANO.2015.7388924
WWW:
http://ieeexplore.ieee.org/document/7388924/
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