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- Titel:
Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps
- Dokumenttyp:
- Konferenzbeitrag
- Art des Konferenzbeitrags:
- Textbeitrag / Aufsatz
- Autor(en):
- Schukfeh, M.I.; Hansen, A.; Tornow, M.; Storm, K.; Thelander, K.D.; Thelander, C.; Samuelson, L.; Hinze, P.; Weimann, T.; Wanderka, N.
- Abstract:
- We demonstrate a wet chemical method to selectively etch InP segments within InAs/InP heterostructure nanowires based on a photo-assisted HAc/HBr solution etching process. We successfully etched InP segments ranging from 60 nm down to about 10 nm in size.
- Stichworte:
- heterostructure nanowire; selective etching, nanogap electrodes
- Kongress- / Buchtitel:
- Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
- Kongress / Zusatzinformationen:
- Rome, Italy, 27-30 July 2015 2015-07
- Jahr:
- 2015
- Quartal:
- 3. Quartal
- Jahr / Monat:
- 2015-07
- Monat:
- Jul
- Sprache:
- en
- Volltext / DOI:
- doi:10.1109/NANO.2015.7388924
- WWW:
- http://ieeexplore.ieee.org/document/7388924/
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