Hybrid Millimeter-Wave Push-Push Oscillators Using Silicon-Germanium HBTs

Push-push design has proven to be an efficient way to extend the usable frequency range of active devices for oscillator applications. In this paper, the basic principles of push-push oscillator design are explained and various possibilities to realize this concept are shown. Several examples of hybrid millimeter-wave push-push oscillators using SiGe HBTs as active devices are discussed. Details on large-signal modeling of the SiGe HBTs using both a vertical bipolar integrated-circuit model, as well as a customized large-signal model are given. Measured key performance data of microstrip resonator oscillators at 57 and 58 GHz are output power levels of +1 dBm and single-sideband phase-noise figures (1-MHz offset from carrier) of -106 and -108 dBm/Hz, respectively. For the dielectric-resonator oscillators, a maximum output power of -8 dBm and an optimum phase noise of -112 dBc/Hz (-14-dBm output power), as well as a mechanical tuning range of 500 MHz were measured.     «

Push-push design has proven to be an efficient way to extend the usable frequency range of active devices for oscillator applications. In this paper, the basic principles of push-push oscillator design are explained and various possibilities to realize this concept are shown. Several examples of hybrid millimeter-wave push-push oscillators using SiGe HBTs as active devices are discussed. Details on large-signal modeling of the SiGe HBTs using both a vertical bipolar integrated-circuit model, as...     »

57 GHz, 58 GHz, bipolar MIMIC, carrier offset phase-noise, customized large-signal model, dielectric resonator oscillators, dielectric-resonator oscillators, DRO, Ge-Si alloys, harmonic oscillator, heterojunction bipolar transistors, hybrid integrated circuits, hybrid millimeter-wave push-push oscillators, integrated circuit design, integrated circuit measurement, integrated circuit modelling, integrated circuit noise, large-signal modeling, maximum output power, mechanical tuning range, microstrip resonator oscillators, microstrip resonators, millimetre wave bipolar transistors, millimetre wave oscillators, optimum phase noise, oscillator applications, output power levels, performance data, phase noise, push-push oscillator design, semiconductor materials, SiGe, silicon-germanium HBT, single-sideband phase-noise figures, usable frequency range, vertical bipolar integrated-circuit model     «

57 GHz, 58 GHz, bipolar MIMIC, carrier offset phase-noise, customized large-signal model, dielectric resonator oscillators, dielectric-resonator oscillators, DRO, Ge-Si alloys, harmonic oscillator, heterojunction bipolar transistors, hybrid integrated circuits, hybrid millimeter-wave push-push oscillators, integrated circuit design, integrated circuit measurement, integrated circuit modelling, integrated circuit noise, large-signal modeling, maximum output power, mechanical tuning range, microst...     »