Novel Low-Side/High-Side Gate Drive and Supply With Minimum Footprint, High Power Density, and Low Cost for Silicon and Wide-Bandgap Transistors

Kacetl, Jan; Kacetl, Tomas; Jaensch, Malte; Goetz, Stefan M.

doi:10.1109/tpel.2020.3016923

Title:: Novel Low-Side/High-Side Gate Drive and Supply With Minimum Footprint, High Power Density, and Low Cost for Silicon and Wide-Bandgap Transistors
Document type:: Zeitschriftenaufsatz
Author(s):: Kacetl, Jan; Kacetl, Tomas; Jaensch, Malte; Goetz, Stefan M.
Journal title:: IEEE Transactions on Power Electronics
Year:: 2021
Journal volume:: 36
Journal issue:: 7
Pages contribution:: 8219-8229
Fulltext / DOI:: doi:10.1109/tpel.2020.3016923
Publisher:: Institute of Electrical and Electronics Engineers (IEEE)
E-ISSN:: 0885-89931941-0107
Date of publication:: 01.07.2021
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