Novel Low-Side/High-Side Gate Drive and Supply With Minimum Footprint, High Power Density, and Low Cost for Silicon and Wide-Bandgap Transistors

Kacetl, Jan; Kacetl, Tomas; Jaensch, Malte; Goetz, Stefan M.

doi:10.1109/tpel.2020.3016923

Titel:: Novel Low-Side/High-Side Gate Drive and Supply With Minimum Footprint, High Power Density, and Low Cost for Silicon and Wide-Bandgap Transistors
Dokumenttyp:: Zeitschriftenaufsatz
Autor(en):: Kacetl, Jan; Kacetl, Tomas; Jaensch, Malte; Goetz, Stefan M.
Zeitschriftentitel:: IEEE Transactions on Power Electronics
Jahr:: 2021
Band / Volume:: 36
Heft / Issue:: 7
Seitenangaben Beitrag:: 8219-8229
Volltext / DOI:: doi:10.1109/tpel.2020.3016923
Verlag / Institution:: Institute of Electrical and Electronics Engineers (IEEE)
E-ISSN:: 0885-89931941-0107
Publikationsdatum:: 01.07.2021
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