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Titel:

Characteristics and optimisation of vertical and planar tunnelling-FETs

Dokumenttyp:
Zeitschriftenaufsatz
Autor(en):
Sterkel, M.; Wang, P.F.; Nirschl, T.; Fabel, B.; Buhwalka, K.; Eisele, I.; Schmitt-Landsiedel, D.; Hansch, W.
Abstract:
Scaling MOSFETs becomes more and more difficult. The tunnelling-FET is a possible successor of today’s MOSFET with better scaling possibilities. Two different device structures, a vertical and a planar version of a tunnelling-FET are presented and evaluated.
Kongresstitel:
Second Conference on Microelectronics, Microsystems and Nanotechnology (MMN), Munich, 2004
Zeitschriftentitel:
Journal of Physics: Conference Series 10 (2005) 15–18
Jahr:
2004
Sprache:
en
Volltext / DOI:
doi:10.1088/1742-6596/10/1/004
WWW:
http://iopscience.iop.org/1742-6596/10/1/004/pdf/1742-6596_10_1_004.pdf
Verlag / Institution:
IOP Publishing, Institute of Physics Publishing
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