The main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the presence of phonons and device imperfections. Typcially, such devices are fabricated on a nanometer length scale. The transport at finite temperature in such devices is equally influenced by coherent and incoherent phenomena. We describe this transport in terms of nonequilibrium Green’s functions and significantly extend common concepts of this method. We answer many open questions of various transport problems and propose concrete device designs for THz Lasers and non-magnetic spin filters.
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The main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the presence of phonons and device imperfections. Typcially, such devices are fabricated on a nanometer length scale. The transport at finite temperature in such devices is equally influenced by coherent and incoherent phenomena. We describe this transport in terms of nonequilibrium Green’s functions and significantly extend common concepts of this...
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