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Titel:

Analysis of the hysteretic behavior of silicon nanowire transistors

Dokumenttyp:
Zeitschriftenaufsatz
Autor(en):
Fahem, Z.; Csaba, G.; Erlen, C.M.; Lugli, P.; Weber, W.M.; Geelhaar, L.; Riechert, H.
Abstract:
We e present a combined experimental and theoretical analysis of the transport properties of silicon nanowire (NW) transistors. The NWs are grown by catalytic chemical vapour deposition and are later deposited on pre-patterned oxidized silicon substrates that provide the device source and drain electrodes. A back gate configuration is used for our study. Through a controlled nickel diffusion, parts of the nominally undoped NWs are turned into nickel silicide NWs. thus providing a direct metallic...     »
Zeitschriftentitel:
physica status solidi (c) Special Issue: 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCTS-15) Volume 5, Issue 1, pages 27
Zeitschriftentitel:
PSS
Jahr:
2008
Jahr / Monat:
2008-01
Quartal:
1. Quartal
Monat:
Jan
Seitenangaben Beitrag:
27-30
Sprache:
en
Volltext / DOI:
doi:10.1002/pssc.200776578
WWW:
http://onlinelibrary.wiley.com/doi/10.1002/pssc.200776578/abstract
Format:
Text
Eingabe:
24.01.2008
Letzte Änderung:
24.01.2008
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