Defect Tolerance of Intersubband Transitions in Nonpolar 
GaN/(Al,Ga)N
 Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics

Titel:: Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics
Dokumenttyp:: Zeitschriftenaufsatz
Autor(en):: Monavarian, Morteza; Xu, Jiaming; Khoury, Michel; Wu, Feng; De Mierry, Philippe; Vennegues, Philippe; Belkin, Mikhail A.; Speck, James S.
Zeitschriftentitel:: Physical Review Applied
Jahr:: 2021
Band / Volume:: 16
Heft / Issue:: 5
Volltext / DOI:: doi:10.1103/physrevapplied.16.054040
Verlag / Institution:: American Physical Society (APS)
E-ISSN:: 2331-7019
Publikationsdatum:: 22.11.2021
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