Benutzer: Gast  Login
Titel:

Temperature driven memristive switching in Al/TiO2/Al devices

Dokumenttyp:
Konferenzbeitrag
Art des Konferenzbeitrags:
Vortrag / Präsentation
Autor(en):
Reiser, D.; Drost, A.; Chryssikos, D.; Eisele, I.; Tornow, M.
Abstract:
Aluminum/titanium dioxide/aluminum memristor structures were investigated via electrical and temperature-dependent measurements. At room temperature, devices show bipolar memristive switching under applied voltage bias with OFF-ON resistance ratios on the order of 10. Increasing the temperature up to 90 -140°C such a memristor, which has been prepared in the high-resistance state (HRS) before, undergoes a pronounced switching into its low resistance state (LRS). This temperature driven switching...     »
Dewey-Dezimalklassifikation:
500 Naturwissenschaften
Kongress- / Buchtitel:
IEEE 20th International Conference on Nanotechnology (IEEE-NANO) 29.07.2020
Kongress / Zusatzinformationen:
Montreal, QC, Canada 29-31 July 2020-07
Verlag / Institution:
IEEE Digital Explorer
Jahr:
2020
Quartal:
3. Quartal
Jahr / Monat:
2020-07
Monat:
Jul
Print-ISBN:
978-1-7281-8265-0
E-ISBN:
978-1-7281-8264-3
Serien-ISSN:
1944-9380, 1944-9399
Reviewed:
ja
Sprache:
en
Volltext / DOI:
doi:10.1109/NANO47656.2020.9183631
WWW:
https://ieeexplore.ieee.org/document/9183631
TUM Einrichtung:
Professur für Molekularelektronik
 BibTeX