A two-stage F-band cascode power amplifier with a peak PAE of 17% in SiGe BiCMOS technology

Titel:: A two-stage F-band cascode power amplifier with a peak PAE of 17% in SiGe BiCMOS technology
Dokumenttyp:: Konferenzbeitrag
Autor(en):: Kurz, Vera; Bilato, Andrea; Biebl, Erwin; Issakov, Vadim
Kongress- / Buchtitel:: 2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
Verlag / Institution:: IEEE
Publikationsdatum:: 01.01.2020
Jahr:: 2020
Print-ISBN:: 9781728121291
Volltext / DOI:: doi:10.1109/sirf46766.2020.9040172
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