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Titel:

Modeling and High-Frequency Simulation of InAs Nanowires

Dokumenttyp:
Zeitschriftenaufsatz
Autor(en):
Popescu, B.; Popescu, D.; Lugli, P.
Abstract:
In this paper, we have investigated the transport in InAs nanowire-based wrap gate field-effect transistors and their high-frequency performance. State-of-the-art InAs devices reveal excellent dc performance in terms of transconductance, subthreshold slope, and saturation behavior. Only, very recently high-frequency measurements have been performed on these devices, demonstrating that they can operate well in the gigahertz range. However, their intrinsic high-frequency performance and the limiti...     »
Stichworte:
Cutoff frequency InAs field-effect transistor (FET) nanowire (NW) simulation trap states wrap gate
Zeitschriftentitel:
Nanotechnology, IEEE Transactions on (Volume:13 , Issue: 4 )
Jahr:
2014
Jahr / Monat:
2014-07
Quartal:
3. Quartal
Monat:
Jul
Sprache:
en
Volltext / DOI:
doi:10.1109/TNANO.2014.2328435
WWW:
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6824202
Verlag / Institution:
IEEE Xplore Digital Library
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