Thermal resistance measurement of GaAs MESFETs by means of photocurrent spectrum analysis and comparison with simulations

Title:: Thermal resistance measurement of GaAs MESFETs by means of photocurrent spectrum analysis and comparison with simulations
Document type:: Zeitschriftenaufsatz
Author(s):: Regoliosi, P.; Di Carlo, A.; Reale, A.; Lugli, P., Peroni, M.; Lanzieri, C.; Cetronio, A.
Abstract:: e power-dependent behaviour of channel temperature in GaAs MESFETs has been measured by using the photocurrent method. Measurements were performed for different packaging of the MESFET. The effective thermal resistance of the devices has been extracted and related to the packaging. We compared the experimental results to hydrodynamic simulations and derived a suitable expression for the thermal conductivity.
Journal title:: Semicond. Sci. Technol. 20 No 2 (February 2005) 135-139
Year:: 2005
Year / month:: 2005-02
Quarter:: 1. Quartal
Month:: Feb
Pages contribution:: 135 - 139
Language:: en
Fulltext / DOI:: doi:10.1088/0268-1242/20/2/005
WWW:: http://iopscience.iop.org/0268-1242/20/2/005/fulltext/
Publisher:: IOP Publishing
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