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- Title:
Characteristics and optimisation of vertical and planar tunnelling-FETs
- Document type:
- Zeitschriftenaufsatz
- Author(s):
- Sterkel, M.; Wang, P.F.; Nirschl, T.; Fabel, B.; Buhwalka, K.; Eisele, I.; Schmitt-Landsiedel, D.; Hansch, W.
- Abstract:
- Scaling MOSFETs becomes more and more difficult. The tunnelling-FET is a possible successor of today’s MOSFET with better scaling possibilities. Two different device structures, a vertical and a planar version of a tunnelling-FET are presented and evaluated.
- Congress title:
- Second Conference on Microelectronics, Microsystems and Nanotechnology (MMN), Munich, 2004
- Journal title:
- Journal of Physics: Conference Series 10 (2005) 15–18
- Year:
- 2004
- Language:
- en
- Fulltext / DOI:
- doi:10.1088/1742-6596/10/1/004
- WWW:
- http://iopscience.iop.org/1742-6596/10/1/004/pdf/1742-6596_10_1_004.pdf
- Publisher:
- IOP Publishing, Institute of Physics Publishing
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