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Title:

Full band approach to tunneling in MOS structures

Document type:
Zeitschriftenaufsatz
Author(s):
Sacconi, F.; Di Carlo, A.; Lugli, P.; Stadele, M.A.
Abstract:
Using atomistic quantum mechanical tight-binding (TB) methods that include the full band structure, we study electron tunneling through three-dimensional models of n+-Si/SiO2/p-Si capacitors with thicknesses between 0.7 and 4.4 nm. We find that the microscopic oxide structure influences transmission coefficients and tunnel currents significantly. The best agreement with experimental current-thickness and current-voltage data is obtained for a model derived from the β-cristobalite polytype of SiO...     »
Journal title:
Electron Devices, IEEE Transactions on (Volume:51 , Issue: 5 )
Year:
2004
Year / month:
2004-06
Quarter:
2. Quartal
Month:
Jun
Pages contribution:
741 - 748
Language:
en
Fulltext / DOI:
doi:10.1109/TED.2004.826862
WWW:
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1303833
Publisher:
IEEE Xplore Digital Library
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