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Title:

Channel thickness dependence of breakdown dynamic in InP-based lattice-matched HEMTs

Document type:
Zeitschriftenaufsatz
Author(s):
Sleiman, A.; Di Carlo, A.; Lugli, P.; Meneghesso, G.A.
Abstract:
We have investigated, by using Monte Carlo simulations, the effects of channel thickness on the breakdown dynamics in InP-based lattice-matched HEMTs (LM-HEMTs). Breakdown is due to the parasitic bipolar action of holes generated by impact ionization and accumulated in the low electric field regions near the source. Our results show that channel shrinking results in an increase in time-to-breakdown values due to holes real-space-transfer effects occurring in thin channel devices. The breakdown b...     »
Journal title:
Electron Devices, IEEE Transactions on (Volume:50 , Issue: 10 )
Year:
2003
Year / month:
2003-10
Quarter:
4. Quartal
Month:
Oct
Pages contribution:
2009 - 2014
Language:
en
Fulltext / DOI:
doi:10.1109/TED.2003.816105
WWW:
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1232917
Publisher:
IEEE Xplore Digital Library
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