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Titel:

Channel thickness dependence of breakdown dynamic in InP-based lattice-matched HEMTs

Dokumenttyp:
Zeitschriftenaufsatz
Autor(en):
Sleiman, A.; Di Carlo, A.; Lugli, P.; Meneghesso, G.A.
Abstract:
We have investigated, by using Monte Carlo simulations, the effects of channel thickness on the breakdown dynamics in InP-based lattice-matched HEMTs (LM-HEMTs). Breakdown is due to the parasitic bipolar action of holes generated by impact ionization and accumulated in the low electric field regions near the source. Our results show that channel shrinking results in an increase in time-to-breakdown values due to holes real-space-transfer effects occurring in thin channel devices. The breakdown b...     »
Zeitschriftentitel:
Electron Devices, IEEE Transactions on (Volume:50 , Issue: 10 )
Jahr:
2003
Jahr / Monat:
2003-10
Quartal:
4. Quartal
Monat:
Oct
Seitenangaben Beitrag:
2009 - 2014
Sprache:
en
Volltext / DOI:
doi:10.1109/TED.2003.816105
WWW:
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1232917
Verlag / Institution:
IEEE Xplore Digital Library
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