Dynamic Screening in AlGaN/GaN Multi Quantum Wells

In this contribution we present a theoretical analysis obtained by coupling a self-consistent solution of Schrödinger and Poisson equations to determine the electronic states in nanostructures with a rate equation model to account for time dependent effects of charge rearrangement. We demonstrate that PL emission is influenced by charge accumulation in the well, and loss of carriers from the ground level induced by both radiative and non-radiative recombination processes. We have investigated the effects of charge accumulation under different condition for PL excitation.     «

In this contribution we present a theoretical analysis obtained by coupling a self-consistent solution of Schrödinger and Poisson equations to determine the electronic states in nanostructures with a rate equation model to account for time dependent effects of charge rearrangement. We demonstrate that PL emission is influenced by charge accumulation in the well, and loss of carriers from the ground level induced by both radiative and non-radiative recombination processes. We have investigated th...     »