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Title:

Method for Fabricating a Nanoelement Field Effect Transistor with Surrounded Gate Structure

Document type:
Patent
Patent number:
US 7425487 (B2)
Inventor:
KREUPL, FRANZ [DE]; SEIDEL, ROBERT [DE]
Patent office:
USA
Publication date patent:
12.01.2010
Year:
2010
Language:
de
TUM Institution:
Hybride Elektronische Systeme
Format:
Text
 BibTeX