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Titel:

Silicon Nanogap Electrode Engineering for Organic Monolayer Field Effect Transistors

Dokumenttyp:
Konferenzbeitrag
Art des Konferenzbeitrags:
Vortrag / Präsentation
Autor(en):
Pfaehler, S.; Pathak, A.; Liao, K.C.; Schwartz, J.; Tornow, M.
Abstract:
The fabrication and characterization of planar silicon nanogap electrode structures is described in which contact separation ≥ 30 nm was achieved. Starting from highly doped silicon-on-insulator substrates, fabrication is based on precise control of electron-beam lithography and subsequent reactive ion etching (etch rate 3.6 nm/s). A monolayer of an aromatic organophosphonate is then assembled in the etched nanogap. Conductance is greatly improved compared to a device absent the monolayer, and d...     »
Dewey-Dezimalklassifikation:
500 Naturwissenschaften
Kongress- / Buchtitel:
IEEE 19th International Conference on Nanotechnology (IEEE-NANO)
Kongress / Zusatzinformationen:
Macau SAR, China 22-26 July 2019-07
Verlag / Institution:
IEEE Digital Explorer
Jahr:
2019
Quartal:
3. Quartal
Jahr / Monat:
2019-07
Monat:
Jul
Print-ISBN:
978-1-7281-2893-1
E-ISBN:
978-1-7281-2892-4 USB ISBN:978-1-7281-2891-7
Serien-ISSN:
1944-9380, 1944-9399
Sprache:
en
Volltext / DOI:
doi:10.1109/NANO46743.2019.8993870
WWW:
https://ieeexplore.ieee.org/document/8993870
TUM Einrichtung:
Professur für Molekularelektronik
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