Comparative Numerical Analysis of the Robustness of Si and SiC PiN Diodes Against Cosmic Radiation-induced Failure

Titel:: Comparative Numerical Analysis of the Robustness of Si and SiC PiN Diodes Against Cosmic Radiation-induced Failure
Dokumenttyp:: Konferenzbeitrag
Autor(en):: Huang, Y.; Lechner, B.; Wachutka, G.
Kongress- / Buchtitel:: Proceedings of ICSCRM 2019
Datum der Konferenz:: 29. September- 04. Oktober
Jahr:: 2019
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