A drift-diffusion simulation model for organic field effect transistors: On the importance of the Gaussian density of states and traps

Journal of Physics D: Applied Physics ACCEPTED MANUSCRIPT • The following article is Open access A drift-diffusion simulation model for organic field effect transistors: On the importance of the Gaussian density of states and traps Mohammed Darwish1 and Alessio Gagliardi2 Accepted Manuscript online 11 December 2019 • © 2019 IOP Publishing Ltd What is an Accepted Manuscript? Download Accepted Manuscript PDF 24 Total downloads Turn on MathJax Share this article Share this content via email Share on Facebook Share on Twitter Share on Google+ Share on Mendeley Article information Abstract The nature of charge transport in organic materials depends on several important aspects, such as the description of the density of states, and the charge mobility model. Therefore specific models describing electronic properties of organic semiconductors must be considered. We have used an organic based drift-diffusion model for the electrical characterization of organic field effect transistors (OFETs) utilizing either small molecules or polymers. Furthermore, the effect of interface traps, bulk traps, and fixed charges on transistor characteristics are included and investigated. Finally, simulation results are compared to experimental measurements, and conclusions are drawn out in terms of transistor performance parameters including threshold voltages, and field-dependent mobilities.     «

Journal of Physics D: Applied Physics ACCEPTED MANUSCRIPT • The following article is Open access A drift-diffusion simulation model for organic field effect transistors: On the importance of the Gaussian density of states and traps Mohammed Darwish1 and Alessio Gagliardi2 Accepted Manuscript online 11 December 2019 • © 2019 IOP Publishing Ltd What is an Accepted Manuscript? Download Accepted Manuscript PDF 24 Total downloads Turn on MathJax Share this article Sha...     »