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Titel:

Difference in space‐charge recombination of proton and electron irradiated GaAs solar cells

Dokumenttyp:
Zeitschriftenaufsatz
Autor(en):
Pellegrino, C.; Gagliardi, A.; Zimmermann, C.G.
Abstract:
GaAs component cells, representative of the middle cell in Ga0.5In0.5P/GaAs/Ge triple junction solar cells, were irradiated with protons and electrons of various energies and fluences. The local ideality factor, calculated from the measured dark J‐V curves, exhibits a characteristic signature of the irradiating particle. With the help of an analytical model based on Shockley‐Read‐Hall statistics, the recombination current in the space‐charge region is calculated, and the local diode ideality fac...     »
Stichworte:
GaAs solar cell ideality factor radiation induced defects recombination current Shockley‐Read‐Hall recombination space radiation
Zeitschriftentitel:
Prog Photovolt Res Appl . 27 5 :379 – 390 2019-05
Jahr:
2019
Jahr / Monat:
2019-05
Quartal:
2. Quartal
Monat:
May
Seitenangaben Beitrag:
379-390
Sprache:
en
Volltext / DOI:
doi:10.1002/pip.3100
WWW:
https://onlinelibrary.wiley.com/doi/full/10.1002/pip.3100
Verlag / Institution:
Wil
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