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Title:

SrTiOx for sub-20 nm DRAM technology nodes—Characterization and modeling

Document type:
Zeitschriftenaufsatz
Author(s):
Kaczer, B.; Larcher, L.; Vandelli, L.; .Reisinger, H.; Popovicia, M.; Climaa, S.; Jie, Z.; Swertsa, S.J.J.; Redolfia, A.; Afanas’ev, V.V.; Jurczaka, M.
Abstract:
The electrical properties of Ru/SrTiOx/Ru capacitors have been investigated. Equivalent Oxide Thickness (EOT) of 0.38 nm at 0 V and current density of 10−7 A cm−2 at ±1 V and 25 °C meet the sub-20 nm DRAM requirements. Relaxation measurements were performed, indicating acceptable charge loss. Modeling of charge trapping at defect sites based on multi-phonon trap-assisted-tunneling quantitatively well describes leakage and capacitance behavior. Highlights • Metal–Insulator–Metal capacitors with...     »
Keywords:
Metal–Insulator–Metal capacitor Strontium titanate Traps
Journal title:
INFOS 2015 Microelectronic Engineering Volume 147 2015-11
Year:
2015
Year / month:
2015-11
Quarter:
4. Quartal
Month:
Nov
Pages contribution:
126-129
Language:
en
Fulltext / DOI:
doi:10.1016/j.mee.2015.04.070
WWW:
https://www.sciencedirect.com/science/article/abs/pii/S0167931715002956
Publisher:
Elsevier B.V.
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