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Titel:

Determination of doping type by calibrated capacitance scanning microwave microscopy

Dokumenttyp:
Zeitschriftenaufsatz
Autor(en):
S. Hommel, N. Killat, A. Altes, T. Schweinboeck, F. Kreupl
Abstract:
The investigation of dopant distribution in discrete and highly integrated electronic devices is the main application of Scanning Microwave Microscopy in the semiconductor industry. To reliably determine the dopant type and the relation between differently doped areas within an electronic device, a calibration method based on the estimated complex impedance is introduced. The validation on differently doped silicon demonstrates that the method is able to simultaneously acquire accumulation and d...     »
Zeitschriftentitel:
Microelectronics Reliability
Jahr:
2017
Jahr / Monat:
2017-06
Nachgewiesen in:
Scopus
Volltext / DOI:
doi:10.1016/j.microrel.2017.06.050
TUM Einrichtung:
Hybride Elektronische Systeme
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